BAV23S small signal diode absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics electrical characteristics t c = 25c unless otherwise noted symbol parameter value unit v rrm maximum repetitive reverse voltage 250 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 microsecond pulse width = 100 microsecond 9.0 3.0 a a t stg storage temperature range -55 to +150 c t j operating junction temperature 150 c symbol parameter value unit p d power dissipation 350 mw r ja thermal resistance, junction to ambient* 357 c/w symbol parameter conditions min. max units v r breakdown voltage i r = 100 a 250 v v f forward voltage i f = 100ma i f = 200ma 1.0 1.25 v v i r reverse leakage v r = 250v v r = 250v, t a = 150 c 100 100 na a t rr reverse recovery time i f = i r = 30ma, i rr = 3.0ma, r l = 100 ? 50 ns 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 0.1 +0.05 -0.01 1gate 2 source 3 drain dimensions in inches and (millimeters) sot-23 http://www.luguang.cn mail:lge@luguang.cn
typical performance characteristics BAV23S small signal diode http://www.luguang.cn mail:lge@luguang.cn
typical performance characteristics (continued) figure 9. power derating curve figure 10. average rectified current(i o ) vs ambient temperature(t a ) figure 11. reverse recovery time vs reverse recovery current (irr) 0 255075100125150 100 200 300 400 p - power dissipation (mw) t a - ambient temperature ( o c) 0 25 50 75 100 125 150 0 50 100 150 200 250 300 i f - current (ma) t a - ambient temperature ( o c) BAV23S small signal diode http://www.luguang.cn mail:lge@luguang.cn
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